TheIR2112(S)isahigh-voltage,high-speedpowerMOSFETandIGBTdriverwithindependenthigh-andlow-sidereferencedoutputchannels.Itisdesignedforuseinawiderangeofapplications,includingmotordrives,powersupplies,andinverters.Thedevicefeaturesafloatingchanneldesignedforbootstrapoperation,allowingittodrivehigh-sideMOSFETsorIGBTsupto600V.Keyspecificationsincludea2.5Asource/2.0Asinkpeakoutputcurrentcapability,under-voltagelockoutforbothchannels,andawideoperatingvoltagerangeof10Vto20V.TheIR2112(S)alsoprovidesprotectionagainstcross-conductionandincludesashutdowninputforemergencyturn-off.Withitscompactdesignandrobustperformance,theIR2112(S)isanidealchoiceforhigh-efficiencypowerconversionsystemsrequiringreliableandprecisegatedriving.Thedatasheetprovidesdetailedelectricalcharacteristics,applicationexamples,andpackageinformationtoassistinsystemdesignandimplementation.
